SEMICONDUCTOR DEVICE - NIPPON STEEL CORP

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0653443

Kind Code:

A

Abstract:

PURPOSE: To reduce cell area of high resistive load type SRAM memory cell with high yield.

CONSTITUTION: A dielectric island 34 is provided directly under a contact hole 31 for power supply line parts 24a, 24b on a poly-Si film constituting a ground line 23. The contact hole 31 penetrates through an interlayer dielectric film 32, the power supply line part 24a, and an interlayer dielectic film 33 and reaches the dielectric island 34 and the power supply line part 24b also contacts with the dielectric island 34 through the contact hole 31. The dielectric island 34 and the power supply line part 24a come into contact with each other through the contact hole 35 and low resistance contact is established between the power supply line parts 24a and 24b through the dielectric island 34. This constitution allows formation of the contact hole 31 above the ground line 23 and realizes reduction of cell area.

Inventors:

TOMIOKA YUGO
SATO YASUO
OKETA YUKIHIRO

Application Number:

JP15131593A

Publication Date:

February 25, 1994

Filing Date:

May 28, 1993

Export Citation:

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Assignee:

NIPPON STEEL CORP

International Classes:

H01L21/3205; H01L21/768; H01L21/8244; H01L23/52; H01L23/522; H01L27/11; (IPC1-7): H01L27/11; H01L21/3205; H01L21/90

Attorney, Agent or Firm:

Kokubun Takaetsu

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