PURPOSE: To make it possible to transmit a correct signal and run at high speed without operational failures.

CONSTITUTION: In terms of an electrode section 1 of a transistor which performs switching operations, a metal thin film wiring 2 which transmits an output signal of the transistor and a change-direction section 3 for the metal thin film wiring 2, the configuration of circular arc is adopted to provide a radius which exceeds the width of the metal thin film wiring 2. Repetition of such patterns constitutes this integrated semiconductor device. Since the change- direction section of the metal thin film wiring 2 is circular arc in shape, the intrinsic impedance of the wiring is mild in change while the generation of reflected waves from the change-direction section 3 is minimized. As a result, a transmission signal can be conveyed with accuracy without deformation from its original waveform. This construction makes it possible to suppress the reflected waves from the change-direction section 3 and transmit an accurate signal and provide an integrated semiconductor device capable of running at high speed without operational failures.