PURPOSE: To provide a plasma treating device capable of a uniform etching at a high etching rate.
CONSTITUTION: In the plasma treating device by which a substrate 4 is placed on either electrode of a pair of electrodes 2 and 3 arranged oppositely in parallel to a vacuum tank 1, a planar magnet 10 is arranged at the back of the other electrode, and the substrate 4 is treated by plasma, the central part of the planar magnet 10 is constituted of high permeability substance 100, and both sides of the high permeability substance are held between magnets 10b constituted of substance different from the high permeability substance and are formed into a planar shape by those magnets. Furthermore, in another invention, differently from the planar magnet in the same invention, planar high permeability substance is arranged on the face near the other electrode in the vicinity of the central part of the planar magnet.
NOMURA TARO
HAYASHI TOSHIO