PURPOSE: To effectively emit to the outside intensive light generated from the peripheral part of a diffusion layer.
CONSTITUTION: An N-type GaAsP layer 2 is laminated on an N-type GaAsP substrate 1, and a P-type GaAsP layer 3 in which Zn is diffused is formed in the layer 2. An Al electrode 5 is patterned on a layer insulating film 9 like an SiN film, and the surface is covered with an SiN film 6 as a protective film. An N-type electrode 7 is formed on the rear of the N-type GaAs substrate 1. A window which is formed in the layer insulating film 9 and turned into a contact hole 8 lefts a part just under the Al electrode 5 and the periphery of the part, and is larger than the diffusion layer 3. The film above the peripheral part 3a of the diffusion layer 3 is only the SiN film 6 satisfying reflection reduction condition, except the peripheral part of the Al electrode 5. Thereby the intensive light generated from the peripheral part 3a of the diffusion layer 3 can be outputted with high efficiency.
YOSHIDA TOSHIKI
ENDO MANABU
