Title:
FORMATION OF ALUMINUM THIN FILM
Document Type and Number:
Japanese Patent JP3058053
Kind Code:
B2
Abstract:
PURPOSE: To provide a method for the formation of aluminum thin films wherein a contact hole is filled with aluminum and an aluminum thin film to be-come a wiring layer is obtained by switching between selective CVD and batch CVD.
CONSTITUTION: An aluminum film is formed on a substrate 1 having on its surface an insulating film with a contact hole. This process includes a step wherein a second aluminum film 6 is formed only in the contact hole by vapor phase chemical growth using material containing gasified aluminum; a step wherein the substrate is exposed to gas containing metallic elements; and a step wherein a third aluminum film 7 is formed by vapor phase chemical growth using material containing gasified aluminum.
Inventors:
Kazumi Sugai
Application Number:
JP16834195A
Publication Date:
July 04, 2000
Filing Date:
June 09, 1995
Export Citation:
Assignee:
NEC
International Classes:
C23C16/20; H01L21/285; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/285; C23C16/20; H01L21/3205; H01L21/768
Domestic Patent References:
| JP6275540A | ||||
| JP6267957A | ||||
| JP6224305A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)