Title:
BIPOLAR TRANSISTOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH0637103
Kind Code:
A
Abstract:
PURPOSE: To increase the operating speed of an element by eliminating the parasitic capacitance of the element and, at the same time, to easily make the element precise by reducing the number of masks.
CONSTITUTION: An emitter area 4a, base area 5a, and collector area 4b are formed in the lateral direction on an insulating substrate and the emitter and collector areas 4a and 4b are formed of Si layers and the base area 5a is formed of an SiGe layer. The Si layers are crystallized into single crystals by laser annealing. etc., after forming the layers in poly-semiconductor layers.
Inventors:
NAKAMURA TOMOHITO
Application Number:
JP18953092A
Publication Date:
February 10, 1994
Filing Date:
July 16, 1992
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L29/165; H01L21/331; H01L29/73; H01L29/737; (IPC1-7): H01L21/331; H01L29/165; H01L29/73
Attorney, Agent or Firm:
Sota Asahina (2 outside)