Title:
SEMICONDUCTOR MANUFACTURING DEVICE AND OPERATING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3045854
Kind Code:
B2
Abstract:
PURPOSE: To avoid the decrease in Al amount contained in a AlGaAs film on a substrate surface.
CONSTITUTION: The title semiconductor manufacturing device is composed of 8 vacuum chamber 1, a reaction chamber 2 provided in the vacuum chamber 1, a substrate holding part 39 provided on the ceiling part of the reaction chamber 2, a heater, the first and second diffused chambers 21, 22, the first and second reaction gas feed pipes 40, 41. On the other hand, the first reaction gas diffused chamber 21 is circularly arranged beneath the reaction chamber 2 while the second reaction gas diffused chamber 22 is arranged in the center of this circle and a cooling chamber 36 is provided beneath the second reaction gas diffused chamber 22 while the second reaction gas feed pipe 41 is extended over the second reaction gas diffused chamber 22 through the inside of this cooling chamber 36.
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Inventors:
Kenji Okumura
Toshiharu Ohnishi
Nobunori Ohmori
Takeshi Okumura
Hidehiko Oku
Toshiharu Ohnishi
Nobunori Ohmori
Takeshi Okumura
Hidehiko Oku
Application Number:
JP34803591A
Publication Date:
May 29, 2000
Filing Date:
December 02, 1991
Export Citation:
Assignee:
Daido Hokusan Co., Ltd.
International Classes:
H01L21/205; (IPC1-7): H01L21/205
Domestic Patent References:
| JP1230227A | ||||
| JP2268419A | ||||
| JP3255620A |
Attorney, Agent or Firm:
Yukihiko Saitou