PURPOSE: To prevent the roughness of the surface of a semiconductor device from being increased in the structure of the device at the time when the formation of a wiring is performed in the semiconductor device and a method of manufacturing the device.

CONSTITUTION: A second insulating film 4 is formed on a first insulating film 3, an opening part for connection to reach a diffused layer 2 and an opening part for a wiring pattern are provided in the film 4, a wiring material layer 5 is formed and the wiring material layer 5 is directly subjected to entire surface etching utilizing an etching protective film 6 without depending on a photolithography technique, whereby a wiring is formed. Thereby, a structure where the roughness of the of a semiconductor device subsequent to the formation of the wiring is small is obtained.