CAPACITOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Title:

CAPACITOR SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH077088

Kind Code:

A

Abstract:

PURPOSE: To provide a capacitor having new structure for a semiconductor device and a producing method for the same. CONSTITUTION: A storage electrode 105 is composed of a lower part, formed from a single conductive layer and connected to a source region 14 and a body extended upwards from this lower part. The intermediate section of this body has a rugged inner/outer wall for increasing capacitance and is formed in the shape of a vase. A dielectric film 115 is formed on the inner and outer surfaces of a storage electrode 105, and a plate electrode 125 is formed on this electric film 115. The storage electrode 105 is formed from only one conductive layer and used for a valid capacitor region, while including its upper surface, side surface and lower surface as well. Thus, an increase in capacitance is achieved easily, and a reliable capacitor can be provided.

Inventors:

SAI RIYUUCHIN
RI TAIU
GO YOUTETSU

Application Number:

JP4909494A

Publication Date:

January 10, 1995

Filing Date:

March 18, 1994

Export Citation:

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Assignee:

SAMSUNG ELECTRONIC

International Classes:

H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L21/8242; H01L27/108; H01L27/04; H01L21/822

Attorney, Agent or Firm:

Hattori Masaki

Next Patent: 原子炉圧力容器