Title:
PATTERN FOR INVESTIGATING ACCURACY OF ALIGNMENT
Document Type and Number:
Japanese Patent JP2555964
Kind Code:
B2
Abstract:
PURPOSE: To improve the accuracy of a pattern for investigating the accuracy of alignment used for measuring the amount of the deviation of the alignment of a photoresist pattern.
CONSTITUTION: A first layer insulating film 20 provided on a semiconductor substrate 1, a polycrystalline silicon layer 30 provided on the first layer insulating film 20, a second layer insulating film 40 provided on the polycrystalline silicon layer 30 and a contact hole 6-2 opened in the second layer insulating film 40 are provided. Photoresist 7-2 is patterned at least at a part in such a contact hole 6-2.
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Inventors:
OBARA SHINJI
Application Number:
JP31052693A
Publication Date:
November 20, 1996
Filing Date:
December 10, 1993
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G01B11/00; G03F9/00; H01L21/027; H01L21/66; H01L23/528; H01L23/544; (IPC1-7): H01L21/027; G01B11/00; G03F9/00
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)