PURPOSE: To realize effective integration of a longitudinal PNP transistor and a DMOSFET which are suitable for an n-channel MOSFET and an output step inverter circuit.

CONSTITUTION: First and second epitaxial layers 17, 18 are formed on a substrate 16, an N+-type buried layer 19 is formed on a surface of the substrate 16 and a P+-type collector buried layer 28 is formed on a surface of the first epitaxial layer 17. A P+-type emitter region 30 is formed on a surface of a region which becomes a base as a longitudinal PNP transistor 12. A body region 33 of a P+-type diffusion 32 is formed simultaneously with the P+-type emitter region 30. A P-type channel region 34 is formed integrally with the P+-type body region 33, and an N+-type source region 35 and a gate electrode 36 are formed as a DMOSFET 13. A P+-type buried layer 38 of an nMOSFET 11 is formed simultaneously with the collector buried layer 28 of the longitudinal PNP transistor 12.