PURPOSE: To manufacture a hot-carrier semiconductor device into such a structure that an emitter is replaced with a collector and can be used by a method wherein a simple change is made in the constitution of an emitter barrier and the constitution of a collector barrier in the hot-carrier semiconductor device.

CONSTITUTION: Intrinsic barrier layers 2A and 4A, which are respectively functioned as an energy barrier to carriers almost symmetrically to the upper and lower directions holding a base layer 3 between them, and pseudo-barrier layers 2B and 4B consisting of a non-doped semiconductor layer for holding an electric field are laminated and formed in order. An emitter layer 5 consisting of and impurity-containing semiconductor layer for radiating the carriers is laminated and formed on the layer 4B and a collector layer 1 consisting of an impurity-containing semiconductor layer for accepting the carriers is laminated and formed under the layer 2B.