Title:
【発明の名称】半導体装置のシリコン酸化膜の製造方法
Document Type and Number:
Japanese Patent JP3060185
Kind Code:
B2
Inventors:
Yuyuki Jitsudo
Takehiko Futaki
Takehiko Futaki
Application Number:
JP19471391A
Publication Date:
July 10, 2000
Filing Date:
May 01, 1991
Export Citation:
Assignee:
High purity chemical research institute
International Classes:
H01L21/316; (IPC1-7): H01L21/316
Domestic Patent References:
| JP316127A | ||||
| JP5500885A |
Other References:
【文献】国際公開92/12535(WO,A1)