PURPOSE: To obtain a thyristor-type surge protective element wherein its surge operating performance and its surge breaking performance are both excellent and its manufacture is easy.

CONSTITUTION: An N1 base and a P1 emitter as well as an N2 base and a P2 emitter are formed respectively on both faces of, e.g. a P-type semiconductor common substrate, and the N1 and N2 bases are partly exposed on surfaces in a plurality of parts so as to be passed through the P1 and P2 emitters. The N1 and N2 bases which have been exposed on both faces are separated and arranged in such a way that no overlapped part exists, the P1 and P2 emitters and the exposed N1 and N2 bases are constituted in such a way that they are short-circuited on the individual faces and that they form respectively one electrode, and the relation-ship of Wp/2≤D≤2W between the distance D between the exposed N1 and N2 bases and the thickness Wp of the P-type semiconductor common substrate as well as of Wp≤≤4Wp between the size of the exposed N1 and N2 bases and the Wp is established. Thereby, it is possible to achieve the purpose of the title element.