Title:
【発明の名称】UHF/VHF共振アンテナ供給源を用いたプラズマリアクタ
Document Type and Number:
Japanese Patent JP2519364
Kind Code:
B2
Abstract:
A plasma reactor (10) uses a ring antenna (25) driven by RF energy (HF, VHF, or UHF) and produces a circularly polarized electromagnetic wave inside the ring. Inside the ring, this wave has a transverse circular electric field and a longitudinal magnetic field. A static magnetic field may be used with the E/M field (typically with direction perpendicular to the wave's electric field component). Placed adjacent to a dielectric window, dome, or bell jar (17), the above apparatus generates a high density, low energy plasma inside a vacuum chamber for etching metals, dielectrics and semiconductor materials (5). When operated at resonance (antenna (25) tuned to resonance with excitation frequency, and magnetic field tuned to resonance with excitation frequency), plasma density may be maximized. Auxiliary bias energy applied to the wafer support cathode (32C) controls the cathode sheath voltage and controls the ion energy independent of density. Various etch processes, deposition processes and combined etch/deposition processes (for example, sputter/facet deposition) are disclosed. Processing of sensitive devices without damage and without microloading can thus be achieved providing high yields.
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Inventors:
KENISU ESU KORINZU
Application Number:
JP31886591A
Publication Date:
July 31, 1996
Filing Date:
December 03, 1991
Export Citation:
Assignee:
APPLIED MATERIALS INC
International Classes:
B01J19/08; C23C16/50; H01J37/32; H01L21/302; H01L21/3065; H01L21/31; H05H1/46; (IPC1-7): H01L21/3065; B01J19/08; C23C16/50; H01L21/31; H05H1/46
Domestic Patent References:
| JP368773A | ||||
| JP5502971A | ||||
| JP2294491A | ||||
| JP2235332A |
Foreign References:
| US4948458A | ||||
| US4232057A |
Attorney, Agent or Firm:
Minoru Nakamura (7 outside)