PURPOSE: To suppress two-dimensional white spot flaws by a method wherein a second impurity layer is completely buried in a semiconductor substrate and, further, extended to a region under a first reading means.
CONSTITUTION: An N-type diffused layer 43 which is to be a photodiode is completely buried in a substrate 21 by an upper high impurity concentration P-type diffused layer 44 and, further, extended to a region under an N-type diffused layer 46 and a high impurity concentration diffused layer 45 heneath a vertical CCD register. It is to be noted that the depths of the N-type diffused layer 46 and the high impurity concentration P-type diffused layer 45 are reduced compared to those of a conventional device. Thus the region of the N-type diffused layer 43 which is to be a photodiode is expanded and smear charges can be suppressed efficiently. With this constitution, a dark current created in the surface layer of the substrate 21 can be completely suppressed and false signals caused by a dark current, i.e., two-dimensional white spot flaws, can be suppressed.
| JPS57126163 | MANUFACTURE OF SOLID-STATE IMAGE SENSING DEVICE |
| JPS6085560 | LINE TRANSFER TYPE PHOTOSENSOR |
| JPH0782760 | [Title of Invention] Image memory element |
ONO HIDEYUKI
SATO AKIRA
TANAKA HARUHIKO
OZAKI TOSHIBUMI
