Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2605594
Kind Code:
B2
Abstract:
PURPOSE: To obtain a highly reliable capacitor of low leak current by a method wherein recesses and protrusions are formed on the surface of the lower electrode and accumulated charge capacitance is increased in the stack type capacitor such as a DRAM and the like.
CONSTITUTION: The second polysilicon film 9, containing V-group impurities, is formed as a capacitor lower electrode, and a deep recessed part is formed along crystal boundary by performing the first etching. Then, the width of the recessed part is widened by the second etching, a porous silicon layer, which causes deterioration of element characteristics, is removed and the desired rough state is obtained on the surface of the lower electrode. Then, an Si3N4 film 10 and an oxide film 11 are formed as capacitor insulating films, the third polysilicon film 12, containing impurities, is formed as the upper electrode, and a capacitor is formed by patterning.
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Inventors:
Toshiyuki Hirota
Application Number:
JP21937093A
Publication Date:
April 30, 1997
Filing Date:
September 03, 1993
Export Citation:
Assignee:
NEC
International Classes:
H01L27/04; H01L21/02; H01L21/3213; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/04; H01L21/822; H01L21/8242; H01L27/108
Domestic Patent References:
| JP4207066A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)