Title:
【発明の名称】ヘテロ接合型バイポーラトランジスタ及びその製造方法並びにそれを用いたメモリセル
Document Type and Number:
Japanese Patent JP2581071
Kind Code:
B2
Abstract:
A heterojunction bipolar transistor formed as a collector top type or emitter top type can operate at high speed and can be fabricated into a semiconductor integrated circuit with ease. The transistor comprises an external base region (36b), an intrinsic base region (38b), an emitter region (33E) and a collector region (39C). The external base region (36b) contacts the emitter region (33E) - or the collector region - at side surfaces thereof. The intrinsic base region (38B) is formed on a region including the boundary between the emitter region (33E) - or the collector region - and the external base region (36b). The collector region (39C) - or the emitter region - is formed on the intrinsic base region (38B).
Inventors:
KAWAI HIROHARU
Application Number:
JP10735287A
Publication Date:
February 12, 1997
Filing Date:
April 30, 1987
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L29/73; H01L21/331; H01L27/06; H01L29/205; H01L29/737; (IPC1-7): H01L21/331; H01L29/205; H01L29/73
Domestic Patent References:
| JP61187271A |
Attorney, Agent or Firm:
Hidekuma Matsukuma