Title:
【発明の名称】Si薄膜の形成方法
Document Type and Number:
Japanese Patent JP3064363
Kind Code:
B2
Inventors:
Fumitoshi Toyokawa
Application Number:
JP24317590A
Publication Date:
July 12, 2000
Filing Date:
September 13, 1990
Export Citation:
Assignee:
NEC
International Classes:
H01L23/52; H01L21/205; H01L21/28; H01L21/3205; (IPC1-7): H01L21/28; H01L21/205; H01L21/3205
Domestic Patent References:
| JP5727057A | ||||
| JP56162829A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)