PURPOSE: To form thick film fine pattern having no possibility that the thick film fine patterns may be released from a glass substrate in case said patterns in direct contact with the glass substrate are to be formed thereon using a sand blasting step.
CONSTITUTION: A resin layer 52 is formed on a glass substrate 50. Next, a thick film 54 is formed on this resin layer 52 and then a resist layer is formed on the thick film 54. Next, the resist layer is exposed to form resist patterns 58 on the thick film 54. Next, the needless parts of the thick film 54 are cut off by a sand blast machine to form the thick film fine patterns 60. Next, the glass substrate 50 with the thick film fine patterns 60 formed thereon is baked at 560°C to decompose the resin layer 52 so that the thick film fine patterns 60 may be fixedly formed in direct contact with the glass substrate 50.
KOIWA ICHIRO
FUJII KOZO
SAWAI HIDEO
