PURPOSE: To lower the discharge impedance at the time of film formation and to improve the productivity of the device by forming a magnetism generating means in a cathode part mounted with a target of the magnetron sputtering device into a specific structure.

CONSTITUTION: This magnetron sputtering device has the cathode part 20 which consists of a target 6 and a backing plate 9 and is arranged with permanent magnets 1, 2 on the rear surface thereof in a position facing a substrate 8. These permanent magnets are composed of a central magnet 1 and an outer peripheral magnet 2 and the corner part 2a of the outer peripheral magnet 2 is formed to a horseshoe shape to make the magnetic line 10 of force of the central part and the magnetic lines of force 12, 13 in the corner part 2a the same in length, by which the magnetic flux density on the target 6 is uniformalized and the glow discharge plasma near the surface of the target 6 is uniformized. The discharge impedance is thus easily lowered.