Title:
【発明の名称】半導体装置
Document Type and Number:
Japanese Patent JP2532471
Kind Code:
B2
Abstract:
PURPOSE:To control diffusion of a noise charge and to prevent a malfunction of a device, by forming an electrode of a layer high in its charge mobility on the periphery of a device to be protected. CONSTITUTION:A source diffusion layer and a drain diffusion 1 are made to be first layers, and a well diffusion layer 2 is made to be a second layer. An electrode of a third layer 3 lower in its resistance than the second layer 2 is made to be of the same type as the well and it is made high in its impurity concentration so as to have a contact 4. A stay of noise charges can be remarkably relaxed in the well 2 in this way. Since diffusion of charges is hence promoted at a low resistance part 3 and the stay of noise charges can be suppressed, this device can be prevented from malfunctioning caused by the noise charges.
Inventors:
HISAMOTO MASARU
TAKEDA EIJI
TAKEDA EIJI
Application Number:
JP14505387A
Publication Date:
September 11, 1996
Filing Date:
June 12, 1987
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L29/78
Attorney, Agent or Firm:
Toshiyuki Usuda