PURPOSE: To reduce deterioration of a transferring accuracy by previously estimating a conversion difference for a transfer pattern size to a mask pattern size, altering the mask pattern size in response to the difference, altering a thickness of the mask pattern film and further altering a gap between the mask and a wafer.
CONSTITUTION: When a mask pattern 2 having a mask pattern size 3, a film thickness 4 is irradiated with an exposure X-ray 1 having a special wavelength and a y direction of an electric field vector, modes of X-rays 5, 6 to be propagated in the pattern 2 are regarded as that the pattern 2 is a complete conductor, and an electric field vector in a mask outlet 7 is given by an electromagnetic equation. An X-ray exposure intensity distribution 10 is obtained with the given size 3, the thickness 4, a wavelength of the X-ray 1 and a gap 8 between the mask and a wafer 9. Thus, data necessary for obtaining a transfer pattern size of desired dimensions can be obtained to obtain a method for exposing the X-ray with high transferring size accuracy.
MURAYAMA SEIICHI
TAKEDA EIJI
