Title:
CLEANING METHOD AND CLEANING SOLUTION FOR SUBSTRATE
Document Type and Number:
Japanese Patent JP3039493
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To remove polluted metal other than a metallic surface exposed by patterning in a cleaning step for a substrate, without etching the metallic material.
SOLUTION: A cleaning solution includes one of aqueous carboxylic acid like oxalic acid, carboxylic ammonium salt and carboxylic acid with an amino- group. A silicon substrate 1 with a gate wiring 6 is cleaned. The polluted metal on the silicon substrate 1 is removed by the carboxylic solution in a chelate effect with the metal. In this way, without etching TiN or W as a low-resistance gate material, the polluted metal can be removed. An adverse effect of the polluted metal on characteristics is prevented, while the reliability of device is ensured.
Inventors:
Tomoko Waki
Hidemitsu Aoki
Hidemitsu Aoki
Application Number:
JP32867597A
Publication Date:
May 08, 2000
Filing Date:
November 28, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/3205; C11D7/26; C11D11/00; C23G5/032; H01L21/02; H01L21/28; H01L21/302; H01L21/304; H01L21/336; H01L29/78; H01L29/49; (IPC1-7): H01L21/304; H01L21/3205; H01L21/336; H01L29/78
Domestic Patent References:
JP9246222A | ||||
JP737846A | ||||
JP7297158A | ||||
JP9157692A | ||||
JP9251972A | ||||
JP9181028A | ||||
JP9328675A | ||||
JP11162916A |
Attorney, Agent or Firm:
Opening Muneaki
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