PURPOSE: To lower on-resistance by making the carrier moving direction of a channel formed on the side surface of a trench nearly coincide with the axial direction for which the carrier effective masses is the second smallest out of the axial directions of three-dimensional orthogonal coordinates in the crystal structure of silicon carbide.
CONSTITUTION: The carrier moving direction of a channel formed on the side surface of a trench 6 is set as the <0001> axial direction of 4H silicon carbide (the direction vertical to the surface where a semiconductor substrate 14 comes into contact with a p-type epitaxial layer 3 is the <0001> axial direction of 4H silicon carbide). A current passes the channel part of the trench 6 side surface and flows in the longitudinal direction. The electron moving direction of the channel is that of the axial direction with second smallest of the effective electron masses out of the axial directions of the three-dimensional orthogonal coordinates in the crystal structure of silicon carbide. Since the effective electron mass is small and the electron mobility is large in the electron moving direction, characteristics of low on-resistance can be obtained.
| WO/2014/022194 | PRODUCTION OF NANOSTRUCTURED CARBON MATERIALS |
| JPH0672704 | PRODUCTION OF SILICON CARBIDE FROM POLYCARBOSILANE |
| WO/2003/043933 | COMPRESSION-MOLDED SILICON CARBIDE STRUCTURES |
TOKURA NORIHITO
KANO HIROYUKI
FUMA HIROO
HAYASHI HIDEMITSU
MIWA KAZUTOSHI
TOYOTA CENTRAL RES & DEV