Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2570166
Kind Code:
B2
Abstract:
PURPOSE: To flatten an interlayer insulating film and to prevent the corrosion of a metallic interconnection.
CONSTITUTION: A silicon oxide film 3 and a silicon nitride film 4 are formed as interlayer insulating films on a lower-layer interconnection 2, the silicon nitride film 4 is polished in a range in which its residual film is left at 200nm or higher, and the silicon nitride film 4 is flattened. Then, the whole face is cleaned, the silicon nitride film is etched back under a dry etching condition under which the etching rate of the silicon oxide film is equal to that of the silicon nitride film, and the silicon nitride film 4 is removed completely.
Inventors:
Shuzo Sasaki
Application Number:
JP8422894A
Publication Date:
January 08, 1997
Filing Date:
April 22, 1994
Export Citation:
Assignee:
NEC
International Classes:
H01L21/302; H01L21/304; H01L21/3065; H01L21/3105; H01L21/3205; H01L21/768; H01L23/522; (IPC1-7): H01L21/3205; H01L21/304; H01L21/3065
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)