To provide a nanodot structure formed on a silicon oxide having a uniform size and an array on a silicon oxidized layer, and to provide a manufacturing method of the same.
There is provided a nanodot structure comprising a silicon substrate 21, silicon oxidized layer 24a formed on the silicon substrate 21, and a plurality of nanodots 26a uniformly arrayed on the silicon oxidized layer 24a, wherein the nanodots 26a are formed from a metal material of any one of silicon, Al, Ti, In, or Ga; and the method comprises the steps of (a) forming a plurality of metal nanodots 26a in a uniform array on the silicon substrate 21, (b) forming the silicon oxidized layer 24a on the silicon substrate 21 and the metal nanodots 26a, and (c) forming the nanodots 26a, having a uniform array at a position corresponding to the metal nanodots 26a on the silicon oxidized layer 24a.
| JP2008536103 | Electrostatically controlled atomic scale conductive device |
| WO/2018/092680 | SEMICONDUCTOR DEVICE |
| WO/2022/048919 | POWER SEMICONDUCTOR DEVICE |
PARK WON-JUN
SARANIN ALEXANDER A
ZOTOV ANDREY V
| JP2001007381A | 2001-01-12 | |||
| JP2004247431A | 2004-09-02 |
Etsuo Tada
Shinobu Kashiwagi