Title:
ナノ接合素子およびその製造方法
Document Type and Number:
Japanese Patent JP5773491
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a formation method of a cobalt thin film capable of obtaining a magnetic cobalt thin film having sufficiently high coercive force and squareness ratio even if the thickness is 35 nm or less, and to provide a nano-junction element using the cobalt thin film.SOLUTION: On a polyethylenenaphthalate substrate 11, a cobalt thin film 12 is deposited with a thickness of 35 nm or less by vacuum deposition, or the like. Two laminates of the cobalt thin film 12 deposited on the polyethylenenaphthalate substrate 11 are then bonded while crossing so that the edges face each other and sandwiching an organic molecule, as required, thus fabricating a nano-junction element. A nonvolatile memory or a magnetoresistance effect element is fabricated of the nano-junction element. A substrate having at least one principal surface composed of SiO, e.g., a quartz substrate, may be used in place of the polyethylenenaphthalate substrate 11.
Inventors:
Kaiju Hideo
Akira Ishibashi
Akira Ishibashi
Application Number:
JP2011197115A
Publication Date:
September 02, 2015
Filing Date:
September 09, 2011
Export Citation:
Assignee:
National University Corporation Hokkaido University
International Classes:
H01L27/28; B82Y10/00; B82Y40/00; C23C14/14; H01F10/16; H01F41/20; H01L21/3205; H01L21/768; H01L21/8246; H01L23/532; H01L27/105; H01L43/10; H01L43/12; H01L45/00; H01L49/00; H01L51/05; H01L51/30
Domestic Patent References:
| JP2002092857A | ||||
| JP10318737A | ||||
| JP10004013A | ||||
| JP2007015890A | ||||
| JP2010263229A |
Foreign References:
| WO2009041239A1 | ||||
| US20100266868 |
Attorney, Agent or Firm:
Koichi Mori
Osamu Matsumura
Osamu Matsumura