Title:
NANOSTRUCTURE DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2012190840
Kind Code:
A
Abstract:
To provide an electrode having a nano gap structure where the single crystal planes face each other and the shape is arranged at the atomic level, and to provide a nanostructure device having this electrode and a manufacturing method therefor.
A nano gap is formed while growing a crystal of a thin metallic wire by applying a predetermined voltage and feeding a predetermined current thereto in an atmosphere gas accelerating crystal growth. The thin metallic wire is locally provided with a region having high crystallinity by crystal growth, and a nano gap is formed in the region.
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Inventors:
SUGA HIROSHI
NAITO YASUHISA
HORIKAWA MASAYO
SHIMIZU TETSUO
FURUTA SHIGEO
SUMIYA TORU
MASUDA YUICHIRO
TAKAHASHI TAKESHI
ONO MASATOSHI
NAITO YASUHISA
HORIKAWA MASAYO
SHIMIZU TETSUO
FURUTA SHIGEO
SUMIYA TORU
MASUDA YUICHIRO
TAKAHASHI TAKESHI
ONO MASATOSHI
Application Number:
JP2011050552A
Publication Date:
October 04, 2012
Filing Date:
March 08, 2011
Export Citation:
Assignee:
NAT INST ADVANCED IND & TECH
FUNAI ELECTRIC ADVANCED APPLIED TECH RES INST INC
FUNAI ELECTRIC CO
FUNAI ELECTRIC ADVANCED APPLIED TECH RES INST INC
FUNAI ELECTRIC CO
International Classes:
H01L29/06; B82B1/00; B82B3/00
Domestic Patent References:
| JP2008311449A | 2008-12-25 | |||
| JP2007123828A | 2007-05-17 | |||
| JP2008311449A | 2008-12-25 |
Attorney, Agent or Firm:
稲葉 龍治
荒船 博司
荒船 良男
赤澤 高
荒船 博司
荒船 良男
赤澤 高
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