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Title:
NEAR FIELD OPTICAL APPARATUS WITH LASER LIGHT SOURCE
Document Type and Number:
Japanese Patent JP3877810
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To to obtain a near field optical apparatus having a semiconductor laser emission source which is small-sized but can supply photon fluxes strong enough and stable.
SOLUTION: A semiconductor laser light source has a nonhomogeneous laser emission face 62 and constituted such that at least 50% of total emission from an emission face takes place in a small (first) region 66 thereof having width w<λS/2, where λS is the emission wavelength of laser. In one embodiment, the laser emission face is provided with multilayer films 64, 65 for comparatively lowering emission from the laser emission face. The laser emission face is also provided with a recess 66 from where the majority of laser light is emitted. The recess 66 defines a first region. The film, for example, comprises at least one dielectric layer and at least one conductor layer formed thereon. The recess extends through the conductor layer and formed by FIB(focused ion beam) etching.


Inventors:
Leslie Conwell Hopkins
Cherry Anne Murray
Afshin Partvi
David Reese Peel
He-Jen James E
George John Zidsick
Application Number:
JP23457696A
Publication Date:
February 07, 2007
Filing Date:
September 05, 1996
Export Citation:
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Assignee:
AT&T CORP.
International Classes:
G01N37/00; H01S5/18; G01N21/01; G01Q60/18; G01Q60/22; G01Q80/00; G11B7/12; G11B7/135; H01S5/00; H01S5/026; H01S5/028; H01S5/10; H01S5/183; (IPC1-7): G01N21/01; G01N37/00; G11B7/125; G11B7/135; H01S3/18
Other References:
特願平7-171744号(特開平8-222814号公報参照)
Attorney, Agent or Firm:
Masao Okabe
Nobuaki Kato
Kazuo
Shinichi Usui
Ikuo Fujino
Takao Ochi
Teruhisa Motomiya
Norimichi Takanashi
Asahi Shinmitsu
Seiichiro Takahashi
Koji Yoshizawa