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Title:
NEGATIVE RESIST COMPOSITION
Document Type and Number:
Japanese Patent JP3821570
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain the negative resist composition suitable for use of light from a ≤220 nm exposure light source, especially, ArF excimer laser beams (193 nm) by incorporating specified compounds and resin.
SOLUTION: This negative resist composition contains the compound to be allowed to produce an acid by irradiation with activated rays or radiation and the resin having polycyclic alicyclic group and a hydroxyl group and at least one kind of cyclic imido compound represented by the formula in which A is a divalent alkylene group or the like optionally having a hetero atom; B is an optionally substituted trivalent alkylene group or the like; Z1 is an H atom or the like; Z2 is an optionally substituted (m+1)-valent alkylene group or the like; Z3 is an optionally substituted n-valent alkylene group or the like; (m) is an integer of ≥1; and (n) is an integer of ≥2. The resin having polycylic alicyclic groups and a hydroxyl group has a ≥5 C bicyclo group or the like as the polycyclic alicyclic group.


Inventors:
Toshiaki Aoi
Shunichi Kondo
Application Number:
JP6559898A
Publication Date:
September 13, 2006
Filing Date:
March 16, 1998
Export Citation:
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Assignee:
Fuji Photo Film Co., Ltd.
International Classes:
G03F7/038; H01L21/027; C08K5/3412; C08L35/00; C08L101/02; (IPC1-7): G03F7/038; G03F7/038; H01L21/027; //C08K5/3412; C08L35/00; C08L101/02
Domestic Patent References:
JP9120162A
JP962005A
JP7199467A
Attorney, Agent or Firm:
Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Hagino Taira
Kiyotaka Sasaki
Toshio Fukasawa
Zenichi Soeda