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Patent Searching and Data


Title:
NEGATIVE RESIST MATERIAL AND METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP2008249951
Kind Code:
A
Abstract:

To provide a negative resist material having a significantly high alkali dissolution rate contrast before and after exposure, high sensitivity, high resolution and small line edge roughness, showing excellent etching durability, and suitable as a fine pattern forming material for manufacturing a VLSI or producing a photomask pattern, and to provide a method for forming a pattern using the above resist material.

The negative resist material contains a polymer compound having a repeating unit by copolymerization expressed by formula (1) and a weight average molecular weight of 1,000 to 500,000. In formula (1), R1 represents a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group; X represents a methylene group, an oxygen atom or a sulfur atom; m is an integer of 1 to 3; n is 1 or 2, satisfying m+n=4; R2 represents a hydrogen atom or a methyl group; R3 represents a hydrogen atom, a fluorine atom, an alkyl group or a fluorinated alkyl group; p and q are integers 1 to 3 satisfying p+t=5 and q+u=7; and a and b satisfy 0(a-1)1.0, 0(b-1)1.0, 0(b-2)1.0, 0(b-1)+(b-2)1.0. Thereby, the resist material has a significantly high alkali dissolution rate contrast before and after exposure, high sensitivity and high resolution and a preferable pattern profile, suppresses an acid diffusion rate, shows excellent etching durability, and is suitable as a fine pattern forming material for manufacturing the VLSI or a photomask.


Inventors:
Hatakeyama, Jun
Harada, Yuji
Takeda, Takanobu
Application Number:
JP2007000090642
Publication Date:
October 16, 2008
Filing Date:
March 30, 2007
Export Citation:
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Assignee:
SHIN ETSU CHEM CO LTD
International Classes:
G03F7/038; C08F212/14; C08F232/08; H01L21/027; G03F7/004
Attorney, Agent or Firm:
小島 隆司
重松 沙織
小林 克成
石川 武史