PURPOSE: To enable to facilitate the manufacturing process and to integrate with other elements by a method wherein the P-side electrode is formed by contact or fusion of the alloy of metal and Si or the mixture to an N type GaAs substrate.
CONSTITUTION: Ta and Si are simultaneously evaporated on the N type GaAs substrate. Next, this deposited film is etched into an electrode pattern, and annealed at a high temperature, thus forming a TaSi P-side electrode 3. Beside, on the back of the substrate, SuGe/Au is evaporated as an N-side electrode 4 and thus alloyed. In the case of alloying TaSix by heat treatment after the mixture of a single body is deposited on the substrate 1 in such a manner, an unstable region of transition appears at the interface between the substrate and the electrode 3, gives influences on the current-voltage characteristic and accordingly comes to obtain the characteristic of N-shaped negative resistance. This enables monolithic integration with other elements in its structural respect, because of no presence of P+-N+ junction.
HIROTA MASAYUKI
KAZUMURA MASARU
