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Title:
NEGATIVE TYPE RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012022338
Kind Code:
A
Abstract:

To provide a resist composition with which fine patterns can be formed without swelling with good practical sensitivity by development using a basic aqueous solution.

A negative type resist composition includes an alkali-soluble resin with an oxetane structure expressed by formulas (I) to (XIII), a solvent and a light acid generator with which acid can be generated with which the oxetane structure of the alkali-soluble resin can react upon absorption and decomposition of an imaging radiation and can be solved in a basic aqueous solution. An exposure part becomes alkali insoluble after exposure of light.


Inventors:
NOZAKI KOJI
YANO EI
OZAWA YOSHIKAZU
WATABE KEIJI
Application Number:
JP2011221175A
Publication Date:
February 02, 2012
Filing Date:
October 05, 2011
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
G03F7/038; C08F220/06; C08F220/18; C08F220/58; C08F222/06; C08F232/08; G03F7/075; G03F7/09; G03F7/38; H01L21/027
Domestic Patent References:
JP2002229204A2002-08-14
JP2001228610A2001-08-24
JP2001226430A2001-08-21
JP2000250217A2000-09-14
JP2001343748A2001-12-14
Attorney, Agent or Firm:
Atsushi Aoki
Koichi Itsubo
Higuchi Souji
Ryu Kobayashi