PURPOSE: To seek to improve the integration degree of a nerve network by forming an amorphous Si layer and a manganese oxide layer vertically.
CONSTITUTION: A switch layer 4 consisting of a hydrogen absorbing amorhpous Si film, a manganese oxide film, or the like is laminated vertically through an insulating film 3 consisting of an SiO2 film or the like on an electrode 2. And a resistance layer 5 consisting of Ni-Cr, Ni-Ge, or the like is formed in series on the switch layer 4, and an electrode 6 is formed in the Y direction by the film of Ni, Al, or the like, in series with the resistance layer 5. Accordingly, it becomes such a shape that the switch layer 4 and the resistance layer 5 are formed in series vertically at an intersection between the electrode and the electrode 6, and a resistor R and a switch SW come to be connected in series. Hereby, the integration degree of a nerve network can be improved.