Title:
中性子検出デバイス及びその製造方法
Document Type and Number:
Japanese Patent JP2007509345
Kind Code:
A
Abstract:
A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.
Inventors:
August, Robert, A.
Hughes, Harold, Elle.
McMur, Patrick, Jay.
Whitlock, Robert, Earl.
Hughes, Harold, Elle.
McMur, Patrick, Jay.
Whitlock, Robert, Earl.
Application Number:
JP2006536670A
Publication Date:
April 12, 2007
Filing Date:
October 12, 2004
Export Citation:
Assignee:
THE UNITED STATES OF AMERICA
International Classes:
G01T3/08; G01T1/02; G01T1/24; H01L31/115
Domestic Patent References:
| JP2002040147A | 2002-02-06 | |||
| JPH06180370A | 1994-06-28 | |||
| JPH05281364A | 1993-10-29 | |||
| JPH07176777A | 1995-07-14 | |||
| JPH0458570A | 1992-02-25 | |||
| JPH0458571A | 1992-02-25 |
Foreign References:
| WO1991017462A1 | 1991-11-14 | |||
| WO1997023003A1 | 1997-06-26 | |||
| US20040178337A1 | 2004-09-16 | |||
| US6075261A | 2000-06-13 | |||
| WO2003007018A2 | 2003-01-23 |
Attorney, Agent or Firm:
Taro Yaguchi
Yasuaki Yamaguchi
Yasuaki Yamaguchi