Title:
NEUTRON DETECTION STRUCTURE
Document Type and Number:
Japanese Patent JP2010004038
Kind Code:
A
Abstract:
To provide a neutron detection structure readily manufactured and utilizing a readily available SOI SRAM.
The neutron detection structure composed of a silicon-on-insulator memory cell includes a conversion layer for converting incident neutrons into charged particles; a device layer accepting the charged particles; an embedded oxide layer directly adjacent to the device layer and the conversion layer for isolating the conversion layer from the device layer; an insulating layer, a passivation layer formed on the insulating layer, opposed to the buried oxide layer and the device layer and a plurality of conductive contacts providing electrical contact to the device layer.
Inventors:
KEYSER THOMAS R
YUE CHEISAN J
YUE CHEISAN J
Application Number:
JP2009138161A
Publication Date:
January 07, 2010
Filing Date:
June 09, 2009
Export Citation:
Assignee:
HONEYWELL INT INC
International Classes:
H01L31/09; G01T3/08
Domestic Patent References:
| JP2001511605A | 2001-08-14 | |||
| JP2006525677A | 2006-11-09 | |||
| JPS6135384A | 1986-02-19 | |||
| JPH05281364A | 1993-10-29 | |||
| JP2007516432A | 2007-06-21 | |||
| JPH05182909A | 1993-07-23 | |||
| JP2007509345A | 2007-04-12 | |||
| JP2002501679A | 2002-01-15 |
Attorney, Agent or Firm:
Shinjiro Ono
Kazuo Shamoto
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Naoki Kazuma
Kazuo Shamoto
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Naoki Kazuma
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