Title:
中性子半導体検出器
Document Type and Number:
Japanese Patent JP6948668
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a neutron semiconductor detector that can improve detection efficiency of neutron while allowing an incident position of neutron to be identified.SOLUTION: A neutron semiconductor detector 1 comprises: a sapphire substrate 11 and a GaN buffer layer 12 formed on the sapphire substrate 11; a P layer 13 formed on the GaN buffer layer 12 and containing gallium nitride (GaN) as P-type semiconductor; an I layer 14 formed on the P layer 13 and containing BGaN as intrinsic semiconductor obtained by mixing GaN and boron (B); an N layer 15 containing GaN as N-type semiconductor formed on the I layer 14; a first electrode 21 electrically connected to the P layer 13; and a plurality of second electrodes 22 electrically connected to the N layer 15, and arrayed on the N layer 15.SELECTED DRAWING: Figure 1
Inventors:
Takayuki Nakano
Toru Aoki
Tsubasa Inoue
Akifumi Koike
Toru Aoki
Tsubasa Inoue
Akifumi Koike
Application Number:
JP2017037321A
Publication Date:
October 13, 2021
Filing Date:
February 28, 2017
Export Citation:
Assignee:
National University Corporation Shizuoka University
Anseen Co., Ltd.
Anseen Co., Ltd.
International Classes:
G01T3/08; G01T1/24; G01T1/29
Domestic Patent References:
| JP2010272577A |
Foreign References:
| US20110163242 | ||||
| US20110284755 |
Other References:
Andrew Geier Melton,DEVELOPMENT OF WIDE BANDGAP SOLID-STATE NEUTRON DETECTORS,In Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the School of Electrical and Computer Engineering, Georgia Institute of Technology,2011年
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuji Suwa
Yuji Suwa