To provide a semiconductor device for neutron detection which is more inexpensive, smaller, mechanically stronger, and which has a smaller power consumption than a gas-filled proportional neutron detector.
The semiconductor device includes a substrate 12, an activated semiconductor layer 14 situated on the substrate 12, a stack 16 of interconnect layers deposited on the activated semiconductor layer, and a neutron conversion layer 20 deposited on the stack 16 of the interconnect layers, wherein the stack 16 of the interconnect layers is configured such that at least about 10% of secondary charged particles generated in the neutron conversion layer 20 has a sufficient ion track length in the activated semiconductor layer 14 to generate a detectable charge. Another semiconductor device includes a substrate 12, an activated semiconductor layer 14 situated on the substrate 12, a neutron conversion layer 20 deposited on the activated semiconductor layer 14, and a stack 16 of interconnect layers deposited on the neutron conversion layer 20.
LARSEN BRADLEY J
FECHNER PAUL S
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Naoki Kazuma