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Title:
NEW ESTER COMPOUND, MACROMOLECULAR COMPOUND, RESIST MATERIAL, AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP2007153982
Kind Code:
A
Abstract:

To provide a resist material having excellent resolution, transparency and etching resistance in ArF exposure, and exhibiting the high performance even in ArF-immersion lithography.

The resist material contains a repeating unit (2) obtained by the polymerization of a compound of general formula (1) (in the formulas, R1 is F or a fluorinated alkyl group; R2 is H or an alkyl group; R3 is O or an alkylene group; R4 and R5 are each H, an alkyl group or a fluorinated alkyl group; and R6 is H or an acid-unstable group).


Inventors:
HARADA YUJI
HATAKEYAMA JUN
KAWAI YOSHIO
SASAKO MASARU
ENDO MASATAKA
MAEDA KAZUHIKO
KOMORIYA HARUHIKO
OTANI MITSUTAKA
Application Number:
JP2005349110A
Publication Date:
June 21, 2007
Filing Date:
December 02, 2005
Export Citation:
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Assignee:
SHINETSU CHEMICAL CO
MATSUSHITA ELECTRIC IND CO LTD
CENTRAL GLASS CO LTD
International Classes:
C08F20/28; C07D307/93; C07D493/18; C08F220/28; C08F232/08; G03F7/004; G03F7/039; H01L21/027
Domestic Patent References:
JP2002351078A2002-12-04
JP2005234015A2005-09-02
JP2005314662A2005-11-10
JP2006022308A2006-01-26
JP2002169289A2002-06-14
JP2005240024A2005-09-08
JP2006234938A2006-09-07
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa