NEW ESTER COMPOUND, POLYMER COMPOUND, RESIST MATERIAL AND METHOD OF PATTERN FORMING

Japanese Patent JP3800318

B2

PROBLEM TO BE SOLVED: To provide a resist material, a base resin of which is a polymer compound by this invention, which is useful for the microfabrication by the electron beam or far ultraviolet ray because the material is sensitive to a high energy beam and is excellent in a sensitivity, a resolving power, and an etching resistance. Especially, the same has the characteristic which forms a perpendicular pattern to a substrate because there is little absorption on the wavelength of an ArF excimer laser or a KrF excimer laser.
SOLUTION: The objective ester compound is shown by formula (1). (In the formula, R1 shows hydrogen, a methyl group, or CH2CO2R3, R2 shows a hydrogen atom, a methyl group, or CO2R3, R3 shows a 1-15C straight chain, branched, or cyclic alkyl group, Z is a 2-20C divalent hydrocarbon group which may have a hetero atom and forms a single ring or a crosslinked ring together with the combined carbon atom, m is 0 or 1, n is 0, 1, 2, or 3 and the number with which is satisfied of 2m+n=2 or 3).

Koji Hasegawa
Tsunehiro Nishi
Tsuyoshi Kanao
Takeshi Watanabe
Mutsuko Nakajima
Seiichiro Tachibana
Jun Hatakeyama

JP2001115209A

July 26, 2006

April 13, 2001

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Shin-Etsu Chemical Co., Ltd.

C08F220/16; G03F7/039; C07C69/013; C07C69/54; C08F222/06; C08F222/40; C08F232/08; C08F234/02; C08K5/00; C08L33/04; H01L21/027; (IPC1-7): C08F220/16; C07C69/013; C07C69/54; C08F222/06; C08F222/40; C08F232/08; C08F234/02; C08K5/00; C08L33/04; G03F7/039; H01L21/027

JP2000267287A
JP10301284A
JP11171835A
JP10287712A
JP11271974A

Takashi Kojima
Yuko Nishikawa

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