To provide a new photo-acid generator suitable as a photo-acid generator for resist materials, because the generator can suppress elution to water when immersed in an ArF liquid and exposed with light and suppress production of a foreign matter caused characteristically when immersed in a liquid and exposed with light and satisfies problems of dependence on coarseness and denseness and line edge roughness and can effectively be used, and a resist material using the generator and to provide a pattern-forming method.
The photo-acid generator for chemical amplification type resist materials responses to a high energy ray such as an ultraviolet ray, a far-ultraviolet ray, an electron beam, EUV, an X-ray, an eximer laser, a -ray or a synchrotron radiation, generates sulfonic acid and is represented by formula (1a): RC(=O)R1-COOCH(CF3)CF2SO3- H+ (wherein R is a hydroxyl, an alkyl, an aryl, a hetero-aryl, an alkoxy, an aryloxy or a hetero-aryloxy; R1 is a divalent organic group which may have a substituent having a hetero atom such as an oxygen atom, a nitrogen atom or a sulfur atom and may form a cyclic structure with R). The photo-acid generator is compatible with resins in the resist material and can carry out acid diffusion control. The photo-acid generator generating sulfonic acid can be used for steps of coating, baking before exposure, exposure, baking after exposure and development in device preparation process without any problem.
WATANABE TAKESHI
HASEGAWA KOJI
OHASHI MASAKI
| JP2007145797A | 2007-06-14 | |||
| JP2007145803A | 2007-06-14 | |||
| JP2007145804A | 2007-06-14 |
| WO2006121096A1 | 2006-11-16 |
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa
Next Patent: METHOD FOR PRODUCING PROPYLENE AND APPARATUS FOR PRODUCING PROPYLENE