To provide a new polymer capable of forming a resist useful for microprocessing using radiation and to provide a resist composition comprising the polymer.
The polymer is represented by formula 1 wherein X is one or more kinds of derivatives selected from the group consisting of a 3-30C vinyl ether derivative, a styrene derivative, a maleic anhydride derivative and an olefin derivative having no electron withdrawing functional group at a position of the double bond; R1 and R3 are each independently one or more kinds of groups selected from the group consisting of a hydrogen atom, a 1-30C alkyl group, a 1-30C alkoxy group, a halogen-substituted alkyl group and a halogen-substituted alkoxyalkyl group; and R2 is one or more kinds of groups selected from the group consisting of a hydrogen atom, a methyl group and a trifluoromethyl group.
PARK JOO-HYEON
SEO DONG-CHUL
KIM CHANG-MIN
CHO SEONG-DUK
JOO HYUN-SANG
Kazuko Fujita