Title:
Nitride semiconductor board
Document Type and Number:
Japanese Patent JP5912383
Kind Code:
B2
Abstract:
A nitride semiconductor substrate is provided in which leak current reduction and improvement in current collapse are effectively attained when using Si single crystal as a base substrate. The nitride semiconductor substrate is such that an active layer of a nitride semiconductor is formed on one principal plane of a Si single crystal substrate through a plurality of buffer layers made of a nitride, in the buffer layers, a carbon concentration of a layer which is in contact with at least the active layer is from 1×1018 to 1×1020 atoms/cm3, a ratio of a screw dislocation density to the total dislocation density is from 0.15 to 0.3 in an interface region between the buffer layer and the active layer, and the total dislocation density in the interface region is 15×109 cm-2 or less.
Inventors:
Yoshihisa Abe
Jun Komiyama
Koji Oishi
Akira Yoshida
Kenichi Eriguchi
Shunichi Suzuki
Jun Komiyama
Koji Oishi
Akira Yoshida
Kenichi Eriguchi
Shunichi Suzuki
Application Number:
JP2011219182A
Publication Date:
April 27, 2016
Filing Date:
October 03, 2011
Export Citation:
Assignee:
CoorsTek Co., Ltd.
International Classes:
H01L21/338; H01L21/205; H01L29/207; H01L29/778; H01L29/812
Domestic Patent References:
| JP2010199441A | ||||
| JP2011082494A | ||||
| JP2012243886A |
Attorney, Agent or Firm:
Kinoshita Shigeru