NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Title:

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Document Type and Number:

Japanese Patent JP2007251119

Kind Code:

A

Abstract:

To obtain a nitride semiconductor device, with a surface of the nitride semiconductor device after etching cleaned, without forming a deterioration layer.

A nitride semiconductor device has a p-type light guide layer 106 composed of a p-type GaN, with a surface being subjected to etching, and a p-type contact layer 108 composed of p-type GaN formed on a surface to be etched in the p-type light guide layer 106. At least the concentration of silicon out of oxygen, carbon, and silicon in an interface between the p-type light guide layer 106 and the p-type contact layer 108 is 1/10 of the concentration of a dopant in the p-type light guide layer 106.

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Inventors:

OGAWA MASAHIRO

Application Number:

JP2006302256A

Publication Date:

September 27, 2007

Filing Date:

November 08, 2006

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

H01L21/205; H01L21/306; H01L33/06; H01L33/14; H01L33/32; H01S5/343

Attorney, Agent or Firm:

Hiroshi Maeda
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura

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