NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

Title:

NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

Document Type and Number:

Japanese Patent JP2011054809

Kind Code:

A

Abstract:

To provide a nitride semiconductor device capable of high-speed operation by reducing access resistance while keeping breakdown-voltage characteristics, and to provide a method of manufacturing the same.

The heterojunction field-effect semiconductor device using a nitride semiconductor includes: a channel layer 3 and a barrier layer 4 formed by being sequentially laminated on a substrate 1; and a source electrode 5 and a drain electrode 6 formed separately from each other on the barrier layer 4, wherein impurity diffusion regions 22 are formed by performing impurity diffusion to a region below each of the source electrode 5 and the drain electrode 6 and from the front surface of the barrier layer 4 to at least a portion of the channel layer 3, and a bandgap is changed.

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Inventors:

SHIOZAWA KATSUOMI
ABE YUJI
FUKITA MUNEYOSHI
NANJO TAKUMA
IMAI AKIFUMI
YAGYU EIJI

Application Number:

JP2009203227A

Publication Date:

March 17, 2011

Filing Date:

September 03, 2009

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

H01L29/812; H01L21/225; H01L21/338; H01L29/778

Domestic Patent References:

JPH039573A	1991-01-17
JP2003197642A	2003-07-11
JP2006086354A	2006-03-30
JP2005217364A	2005-08-11
JPH1022494A	1998-01-23
JP2005079369A	2005-03-24

Foreign References:

WO2008120094A2

2008-10-09

Attorney, Agent or Firm:

Yoshitake Hidetoshi
Takahiro Arita

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