Title:
NITRIDE SEMICONDUCTOR, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2023026837
Kind Code:
A
Abstract:
To provide a nitride semiconductor, a semiconductor device, and a method for manufacturing the nitride semiconductor capable of suppressing warpage.SOLUTION: According to an embodiment, a nitride semiconductor includes a substrate, a nitride member, and an intermediate region between the substrate and the nitride member. The nitride member includes a first nitride region including Alx1Ga1-x1N (0
Inventors:
HIKOSAKA TOSHIKI
NAGO HAJIME
TAJIMA JUNPEI
NUNOUE SHINYA
NAGO HAJIME
TAJIMA JUNPEI
NUNOUE SHINYA
Application Number:
JP2021132234A
Publication Date:
March 01, 2023
Filing Date:
August 16, 2021
Export Citation:
Assignee:
TOSHIBA CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
TOSHIBA ELECTRONIC DEVICES & STORAGE CORP
International Classes:
H01L21/20; H01L21/205; H01L21/336; H01L21/338
Attorney, Agent or Firm:
Hyuga Temple Masahiko
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Takeuchi Isao