Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3503439
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a highly reliable nitride semiconductor device having enhanced emission intensity in which short circuit does not occur even after long term use under high temperature high humidity conditions.
SOLUTION: The nitride semiconductor device comprises a substrate 11, an n-type layer 12 and a p-type layer 13 formed sequentially on the substrate 11, a p-type electrode 23 provided on the p-type 13, a first recess 301 reaching the n-type layer 12 from the p-type layer 13 side, an n-electrode 14 provided on the n-type layer 12 exposed to the first recess 301, and a second recess 302 reaching the substrate 11 from the p-type layer 13 side. The surface 304 of the substrate exposed to the second recess 302 is located lower than the interface between the n-type layer 12 and the substrate 11 and an insulation film 24 is formed continuously from the p-type electrode 23 and the n-electrode 14 to the second recess 302 except the bonding face of the p-type electrode 23 and the n-electrode 14.
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Inventors:
Tatsunori Toyoda
Hirofumi Shono
Toshinori Tanaka
Atsushi Sakaki
Hirofumi Shono
Toshinori Tanaka
Atsushi Sakaki
Application Number:
JP24666597A
Publication Date:
March 08, 2004
Filing Date:
September 11, 1997
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01L33/10; H01L33/22; H01L33/32; H01L33/40; H01L33/44; H01L33/62; H01S5/00; H01S5/22; H01S5/323; (IPC1-7): H01L33/00; H01S5/22
Domestic Patent References:
| JP7183573A | ||||
| JP5160437A | ||||
| JP6188452A | ||||
| JP529661A | ||||
| JP7193277A | ||||
| JP6104529A | ||||
| JP927639A | ||||
| JP324771A | ||||
| JP60253286A |