Title:
NITRIDE SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2002299762
Kind Code:
A
Abstract:
To increase relaxation vibration frequency, increase responsivity and improve RIN characteristic, by decreasing free-carrier absorption loss, in a clad layer adjacent to a core for reducing the threshold current.
In the laser element, both or one of clad layers is arranged to have a double-layer structure for restraining the impurity concentration, of one of the clad layers adjacent to a core, to a low level.
Inventors:
WATANABE YUSUKE
NAGAHAMA SHINICHI
NAGAHAMA SHINICHI
Application Number:
JP2001101925A
Publication Date:
October 11, 2002
Filing Date:
March 30, 2001
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
C23C16/34; H01S5/22; H01S5/323; H01S5/343; (IPC1-7): H01S5/22; C23C16/34; H01S5/323
Domestic Patent References:
JP2000299532A | 2000-10-24 | |||
JPH0818102A | 1996-01-19 | |||
JPH11312825A | 1999-11-09 | |||
JPH11330605A | 1999-11-30 | |||
JPH1154828A | 1999-02-26 |
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