To provide a nitride semiconductor element with a structure capable of preventing a p-type dopant from being diffused into an n-type semiconductor layer composed of a group III nitride semiconductor.
The nitride semiconductor element is provided with a substrate 1 and a nitride semiconductor laminated structure section 2 formed on one side of the substrate 1. The nitride semiconductor laminated structure section 2 is provided with an n-type layer 3, a p-type GaN layer 4 laminated and formed on the n-type layer 3, and an n+type GaN layer 5 laminated and formed on the p-type GaN layer 4. The n-type layer 3 is provided with an n+type GaN layer 6, an n-type GaN layer 7, and an n-type AlGaN layer 8, and the n-type AlGaN layer 8 is formed at a portion contacting the p-type GaN layer 4 in the n-type layer 3.
Mio Kawasaki
Yuichi Minagawa
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